KBP200 डाटा शीट PDF( Datasheet )

KBP200 - KBP210 PRV : 50 - 1000 Volts Io : 2.0 Amperes Features • High case dielectric strength • High surge current capability • High reliability • Low reverse current • Low forward voltage drop •

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 KBP200 - KBP210 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 2.0 Amperes FEATURES : * High case dielectric strength * High surge curr

® WON-TOP ELECTRONICS KBP200 – KBP2010 2.0A SINGLE PHASE BRIDGE RECTIFIER Pb Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Curr

Silicon Bridge Rectifiers COMCHIP www.comchiptech.com KBP200 Thru 2010 Reverse Voltage: 50 - 1000 Volts Forward Current: 2.0 Amp KBP Features Diffused Junction Low Forward Voltage Drop High Current Capabili

KBP200~KBP2010 SILICON BRIDGE RECTIFIERS VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes FEATURES • Plastic material used carries Underwriters Laboratory Recognition • Surge overload rating : 60 amperes peak

Bridge Rectifier KBP200 THRU KBP210 Formosa MS  6 122344

www.DataSheet4U.com Silicon Bridge Rectifiers KBP200-G thru 2010-G (RoHS Device) Reverse Voltage: 50 ~ 1000 Volts Forward Current: 2.0 Amp Features: Diffused Junction Low Forward Voltage Drop High Reliability