डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K9F6408Q0C | 8M x 8 Bit Bit NAND Flash Memory K9F6408Q0C K9F6408U0C
Document Title
8M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 Initial issue.
0.1 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ. |
Samsung |
|
K9F6408Q0C | 8M x 8 Bit Bit NAND Flash Memory ELECTRONICS
March. 2003
San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799
512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC characteris |
Samsung semiconductor |
|
K9F6408Q0C-B | 8M x 8 Bit Bit NAND Flash Memory K9F6408Q0C K9F6408U0C
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ |
Samsung semiconductor |
|
K9F6408Q0C-H | 8M x 8 Bit Bit NAND Flash Memory K9F6408Q0C K9F6408U0C
FLASH MEMORY
Document Title
8M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -->3mA -typ |
Samsung semiconductor |
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