डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K4T51163QG | 512Mb G-die DDR2 SDRAM CSD18503Q5A
www.ti.com SLPS358 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18503Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Ter |
Samsung |
|
K4T51163QJ | 512Mb J-die DDR2 SDRAM | Samsung |
|
K4T51163QG | 512Mb G-die DDR2 SDRAM | Samsung |
|
K4T51163QB | 512Mb B-die DDR2 SDRAM | Samsung |
|
K4T51163QB-ZCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
|
K4T51163QN | 512Mb N-die DDR2 SDRAM | Samsung |
|
K4T51163QE | 512Mb E-die DDR2 SDRAM Specification | Samsung semiconductor |
|
K4T51163QQ | 512Mb Q-die DDR2 SDRAM | Samsung |
|
K4T51163QB-GCD5 | 512Mb B-die DDR2 SDRAM | Samsung semiconductor |
|
K4T51163QI | 512Mb I-die DDR2 SDRAM | Samsung |
www.DataSheet.in | 2017 | संपर्क |