| No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
2SK3816 • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS |
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Sanyo Semicon Device |
N-Channel Silicon MOSFET • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta |
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ON Semiconductor |
N-Channel Power MOSFET • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 26mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DE |
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Yongjia |
read slider keys and independent keys touch |
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Yongjia |
1 to 16-button IIC |
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