K368 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| K368 | 2SK368 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications Constant Current Applications
2SK368
Unit: mm
· High breakdown voltage: VGDS = |
 Toshiba Semiconductor |
|
| K3683 | 2SK3683 www.DataSheet4U.com
PRELIM INARY
2SK3683-01MR (500V/0.38Ω/19A)
1) Package
Items Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum A |
 Fuji Electric |
|
| K3686-01 | 2SK3686-01 2SK3686-01
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
Outline Drawings |
Fuji Electric |
|
| K3687-01MR | 2SK3687-01MR 2SK3687-01MR
www.DataSheet4U.com
FUJI POWER MOSFET
Super FAP-G Series
200311
N-CHANNEL SILICON POWER MOSFET
Features High speed switching No secondary breadown Avalanche-proof
Low on-resistance Low driving p |
Fuji Electric |
|
| K3689-01 | 2SK3689-01 www.DataSheet4U.com
2SK3689-01
FUJI POWER MOSFET
200311
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-res |
 ETC |
शेयर लिंक :
[1]
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