K365 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK365 For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications 2SK365 Unit: mm · High breakdown voltage: VGDS

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3652 N-channel enhancement mode MOSFET 3.3±0.3Product lifecyclennuaen ■ Features • Low on-resistance, low Qg • High avala

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3659 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent