K363 डाटा शीट PDF( Datasheet )

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK363 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SK363 Unit: mm • High breakdown voltage: VGD

Photocoupler K3630 • K3631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package. DIMENSION (Unit : mm) FEATURES • Switching T

Photocoupler K3630 • K3631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Phototransistor in a 6-pin package. DIMENSION (Unit : mm) FEATURES • Switching T

Power MOSFETs 2SK3637 Silicon N-channel power MOSFET 15.5±0.5 Unit: mm φ 3.2±0.1 5˚ 3.0±0.3 5˚ For PDP/For high-speed switching (10.0) 26.5±0.5 (4.5) • Low on-resistance, low Qg • High avalanche

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent s

DATA SHEET MOS FIELD EFFECT TRANSISTOR www.DataSheet4U.com 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent