डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K2980 | Silicon N-Channel MOSFET 2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA)
• 2.5 V gate drive devices. • Small package (MPAK)
Outline
RENESA |
Renesas |
|
K2984 | 2SK2984 | NEC |
|
K2983 | 2SK2983 | NEC |
|
K2981 | 2SK2981 | NEC |
|
K2985 | 2SK2985 | Toshiba Semiconductor |
|
K2986 | 2SK2986 | Toshiba Semiconductor |
|
K2980 | Silicon N-Channel MOSFET | Renesas |
www.DataSheet.in | 2017 | संपर्क |