डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
K2796 | 2SK2796 2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.12Ω typ.
• 4V gate drive devices. • High speed switching
Outline
DPAK |1
D G
S
ADE- |
Hitachi Semiconductor |
|
K2796 | 2SK2796 | Hitachi Semiconductor |
|
K2792 | 2SK2792 | ROHM |
|
K2799 | 2SK2799 | Shindengen Electric |
www.DataSheet.in | 2017 | संपर्क |