K222 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| K222 | 2SK222 Ordering number:EN836G
N-Channel Junction Silicon FET
2SK222
Low-Frequency, Low Noise Amplifier Applications
Features
· Ultralow noise figure. · Large yfs. · Low gate leakage current.
Package Dimens |
 Sanyo Semicon Device |
|
| K2220 | Silicon N Channel MOS FET 2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
 Renesas |
|
| K2220 | 2SK2220 2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
 Hitachi Semiconductor |
|
| K2221 | Silicon N-Channel MOSFET 2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
Renesas |
|
| K2221 | 2SK2221 2SK2220, 2SK2221
Silicon N-Channel MOS FET
Application
Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352
Features
• High power gain • Excellent frequency response • High speed switching |
Hitachi Semiconductor |
|
| K2222 | N-Channel Transistor |
 ETC |
|
| K2225 | 2SK2225 2SK2225
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• High breakdown voltage (VDSS = 1500 V) • High speed switching • Low drive current • No Secondary Breakdown • Suitab |
Hitachi Semiconductor |
शेयर लिंक :
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