| No. | Partie # | Fabricant | Description | Fiche Technique |
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Samsung |
1Mx16 bit Uni-Transistor Random Access Memory • • • • • • UtRAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of syste |
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Samsung |
1Mx16 bit Uni-Transistor Random Access Memory • • • • • • UtRAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of syste |
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