डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01S
○ For wave detection
¾ Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current J |
Toshiba Semiconductor |
|
JDH3D01FV | Diode Silicon Epitaxial Schottky Barrier Type | Toshiba Semiconductor |
|
JDH3D01S | Diode Silicon Epitaxial Schottky Barrier Type | Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |