डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
JCS2N60I | N-channel enhancement mode Field-Effect Transistor R N 沟道增强型场效应晶体管
JCS2N60 U/I
产品特性
◆600V,RDS=5.0 Ω@VGS=10V ◆低栅极电荷(典型值 12.5nC) ◆低 Crss(典型值 7.6pF) ◆开关速度快 ◆产品全部经过雪崩测� |
JILIN SINO-MICROELECTRONICS |
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JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
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JCS2N60F | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
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JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
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JCS2N60 | N-channel enhancement mode Field-Effect Transistor | ETC |
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JCS2N60F | N-Channel MOSFET | INCHANGE |
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JCS2N60C | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
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JCS2N60R | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
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JCS2N60C | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
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JCS2N60 | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
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JCS2N60V | N-CHANNEL MOSFET | JILIN SINO-MICROELECTRONICS |
www.DataSheet.in | 2017 | संपर्क |