JCS2N60F डाटा शीट PDF( Datasheet )

N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS2N60 主要参数 MAIN CHARACTERISTICS ID 2.0 A VDSS 600 V Rdson（@Vgs=10V） 5 Ω Qg 15.3 nC 封装 Package 用途  高频开关电源  电�

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic