IXTY3N60P डाटा शीट PDF( Datasheet )

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N60P IXTA3N60P IXTP3N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C

isc N-Channel MOSFET Transistor IXTY3N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.9Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-t