डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTV26N60P | N-Channel Power MOSFET PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM |
IXYS |
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IXTV26N60P | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 270mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot va |
INCHANGE |
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IXTV26N60PS | N-Channel Power MOSFET PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) ≤ 270 mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM |
IXYS |
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