IXTQ180N10T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET IXTH180N10T IXTQ180N10T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180 6.4 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot vari