IXTQ180N085T डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| IXTQ180N085T | Power MOSFET TrenchMVTM Power MOSFET
IXTH180N085T IXTQ180N085T
N-Channel Enhancement Mode Avalanche rated Fast Intrinsic Rectifier
VDSS = 85V ID25 = 180A ≤RDS(on) 5.5mΩ
TO-247
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA |
 IXYS Corporation |
|
| IXTQ180N085T | N-ChannelMOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari |
 INCHANGE |
शेयर लिंक :
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