IXTQ160N085T डाटा शीट PDF( Datasheet )

Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 160N085T IXTA 160N085T IXTP 160N085T VDSS = ID25 = =RDS(on) 85 V 160 A 6.0 mΩ TO-3P (IXTQ) Symbol Test Conditions

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 85V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot varia