IXTP1R6N50P डाटा शीट PDF( Datasheet )

PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM

isc N-Channel MOSFET Transistor IXTP1R6N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot