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IXTP1N100 | High Voltage MOSFET Advanced Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTA 1N100 IXTP 1N100
VDSS ID25
RDS(on)
= 1000 V = 1.5 A = 11 Ω
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR |
IXYS Corporation |
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IXTP1N100P | TO-220C N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP1N100P
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
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IXTP1N100P | Power MOSFET PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTY1N100P IXTA1N100P IXTP1N100P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25 |
IXYS |
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IXTP1N100P | TO-252 N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 15Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variat |
INCHANGE |
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