डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP12N65X2 | Power MOSFET Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTA12N65X2 IXTP12N65X2 IXTH12N65X2
VDSS = ID25 = RDS(on)
650V 12A 300m
TO-263 AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM |
IXYS |
|
IXTP12N65X2 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 300mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% |
INCHANGE |
|
IXTP12N65X2M | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP12N65X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 300mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for ro |
INCHANGE |
|
IXTP12N65X2M | Power MOSFET X2-Class Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTP12N65X2M
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight
Test Conditions TJ = 25C |
IXYS |
www.DataSheet.in | 2017 | संपर्क |