IXTP120N04T2 डाटा शीट PDF( Datasheet )

TrenchT2TM Power MOSFET IXTA120N04T2 IXTP120N04T2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 40V 120A 6.1mΩ TO-263 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD

isc N-Channel MOSFET Transistor IXTP120N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L