IXTP110N055T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXTP110N055T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T IXTP110N055T N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 ILR

Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA110N055T2 IXTP110N055T2 VDSS = ID25 = RDS(on) ≤ 55V 110A 6.6mΩ TO-263 (IXTA) Symbol VDSS VDGR VG

isc N-Channel MOSFET Transistor IXTP110N055T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum