डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTP05N100 | Power MOSFET High Voltage Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA05N100HV IXTA05N100 IXTP05N100
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = |
IXYS Corporation |
|
IXTP05N100 | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTP05N100
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
|
IXTP05N100M | N-Channel MOSFET High Voltage MOSFET IXTP05N100M
(Electrically Isolated Tab)
VDSS = ID25 =
RDS(on) ≤
1000V 700mA 17Ω
N-Channel Enhancement Mode Avalanche Rated
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM T |
IXYS |
|
IXTP05N100M | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 1000V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 17Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |