डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTK250N10 | Power MOSFET Advance Technical Information
High Current MegaMOSTMFET
N-Channel Enhancement Mode
IXTK 250N10
VDSS ID25
RDS(on)
= 100 V = 250 A = 5 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ |
IXYS Corporation |
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IXTK250N10 | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot vari |
INCHANGE |
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