IXTK170N10P डाटा शीट PDF( Datasheet )

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTT170N10P IXTQ170N10P IXTK170N10P Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions

isc N-Channel MOSFET Transistor IXTK170N10P ·FEATURES ·Drain Current ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.009Ω(Max) ·Fast Switching