IXTJ36N20 डाटा शीट PDF( Datasheet )

ADVANCE TECHNICAL INFORMATION HiPerFETTM N-Channel Enhancement Mode IXTJ 36N20 VDSS = 200 V ID25 = 36 A RDS(on) = 70 mΩ trr < 200 ns Symbol Test Conditions VDSS VDGR VGS V GSM ID25 IDM IAR EAR dv/dt P D

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var