IXTH90N15T डाटा शीट PDF( Datasheet )

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 = RDS(on) ≤ 150V 90A 20mΩ Symbol VDSS VDGR V

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia