डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTH250N075T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH250N075T IXTQ250N075T
VDSS = ID25 =
RDS(on) ≤
75 250 4.0
V A mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR |
IXYS Corporation |
|
IXTH250N075T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTH250N075T
·FEATURES ·Drain Source Voltage-
: VDSS= 75V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lo |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |