IXTH200N10T डाटा शीट PDF( Datasheet )

TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH200N10T IXTQ200N10T Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25

isc N-Channel MOSFET Transistor IXTH200N10T ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum