IXTH160N10T डाटा शीट PDF( Datasheet )

Preliminary Technical Information TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH160N10T IXTQ160N10T VDSS = ID25 = RDS(on) ≤ 100 160 7.0 V A mΩ TO-247 (IXTH) Symbol VDSS VDGR V

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.0mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari