डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTC280N055T | Power MOSFET Preliminary Technical Information
TrenchMVTM
IXTC280N055T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
55 145 3.6
V A mΩ
Symbo |
IXYS Corporation |
|
IXTC280N055T | Power MOSFET | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |