डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTC200N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.0mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable op |
INCHANGE |
|
IXTC200N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM
IXTC200N085T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
85 110 5.5
V A mΩ
Symbo |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |