डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXTA180N085T | Power MOSFET Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA180N085T IXTP180N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
85 180 5.5
V A mΩ
Symbol
VDSS VDGR VGSM ID25 ILR |
IXYS Corporation |
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IXTA180N085T | N-Channel MOSFET isc N-Channel MOSFET Transistor
IXTA180N085T
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 5.5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum L |
INCHANGE |
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IXTA180N085T7 | Power MOSFET TrenchMVTM Power MOSFET
IXTA180N085T7
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = ID25 =
RDS(on) ≤
85V 180A 5.5mΩ
TO-263 (7-lead)
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA |
IXYS Corporation |
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