IXKC23N60C5 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 100mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe

IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge Preliminary data D G S ID2