डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXGQ28N120B | High Voltage IGBT High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to |
IXYS |
|
IXGQ28N120BD1 | High Voltage IGBT High Voltage IGBT with Diode
IXGQ 28N120B IXGQ 28N120BD1
V CES
IC25 VCE(sat)
tfi(typ)
= 1200 V = 50 A = 3.5 V = 160 ns
Symbol
Test Conditions
VCES VCGR
V GES
VGEM
IC25 IC110 ICM
SSOA (RBSOA)
TJ = 25°C to |
IXYS |
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