डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXFX360N10T | Power MOSFET Preliminary Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK360N10T IXFX360N10T
VDSS =
ID25 =
RDS(on) ≤
trr
≤
100V |
IXYS |
|
IXFX360N10T | N-Channel MOSFET isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2.9mΩ(Max)@VGS=10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |