IXFP34N65X2M डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFP34N65X2M ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 100mΩ@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device

X2-Class HiperFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXFP34N65X2M D G S VDSS = ID25 =  RDS(on) 650V 34A 100m OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM I