IXFH94N30T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot var

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT94N30T IXFH94N30T VDSS = 300V ID25 = 94A ≤ RDS(on) 36mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol