IXFH160N15T डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor IXFH160N15T ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.6mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum

Preliminary Technical Information Power MOSFET TrenchHVTM HiPerFETTM N-Channel Enhancement Mode Avalanche Rated IXFH160N15T VDSS ID25 RDS(on) = 150V = 160A ≤ 9.6mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA

isc N-Channel MOSFET Transistor IXFH160N15T2 ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum L

Preliminary Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH160N15T2 VDSS = ID25 = ≤ RDS(on) trr ≤ 150V 160A 9.0mΩ 160