डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXBT42N170 | Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH42N170 IXBT42N170
VCES = IC90 = VCE(sat) ≤
1700V 42A 2.8V
Symbol
VCES VCGR
VGES VGEM
IC25 ILRMS IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tst |
IXYS Corporation |
|
IXBT42N170A | Monolithic Bipolar MOS Transistor Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBT42N170A IXBH42N170A
VCES =
IC90 =
VCE(sat) tfi
≤ =
1700V
21A
6.0V 20ns
Symbol
VCES VCGR VGES |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |