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IXBN42N170A | Monolithic Bipolar MOS Transistor Preliminary Technical Information
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBN42N170A
VCES =
IC90 =
VCE(sat) tfi
≤ =
1700V
21A
6.0V 20ns
E
Symbol VCES VCGR VGES VGEM IC25 |
IXYS |
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IXBN42N170A | Monolithic Bipolar MOS Transistor | IXYS |
www.DataSheet.in | 2017 | संपर्क |