डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXBH16N170 | BIMOSFET Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
IXBH16N170 IXBT16N170
VCES = IC90 = VCE(sat) ≤
1700V 16A 3.3V
Symbol
VCES VCGR
VGES VGEM
IC25 IC90 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TTLS |
IXYS |
|
IXBH16N170A | High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor Advanced Technical Information
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 16N170A IXBT 16N170A
VCES IC25 VCE(sat) tfi(typ)
= 1700 V = 16 A = 6.0 V = 50 ns
Symbol VCES VCGR V |
IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |