डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXBH10N170 | High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor www.DataSheet4U.com
High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS Transistor
TM
IXBH 10N170 IXBT 10N170
VCES = 1700 V IC25 = 20 A VCE(sat) = 3.8 V
Preliminary Data Sheet
Symbol VCES VCGR VGES VGE |
IXYS Corporation |
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IXBH10N170 | High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor | IXYS Corporation |
www.DataSheet.in | 2017 | संपर्क |