डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IXBF9N160 | High Voltage BIMOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
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IXYS Corporation |
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IXBF9N160 | Power MOSFET Advanced Technical Information
High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor
IXBF 9N140 IC25 IXBF 9N160 VCES
VCE(sat) tf
= = = =
7A 1400/1600 V 4.9V 40 ns
1 5
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IXYS Corporation |
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IXBF9N160G | High Voltage BIMOSFET High Voltage BIMOSFETTM
in High Voltage ISOPLUS i4-PACTM
Monolithic Bipolar MOS Transistor
IXBF 9N160 G
IC25 = 7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ans
1 5
IGBT
Symbol VCES VGES IC25 IC90 ICM VCEK Ptot
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IXYS |
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