डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
IX4351NE | 9A Low Side SiC MOSFET/IGBT INTEGRATED CIRCUITS DIVISION
Features
• Separate 9A peak source and sink outputs • Operating Voltage Range: -10V to +25V • Internal charge pump regulator for selectable
negative gate drive bias • Desatu |
IXYS |
|
IX4351NE | 9A Low Side SiC MOSFET/IGBT | IXYS |
www.DataSheet.in | 2017 | संपर्क |