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IS42S16160 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
IS42S16160

Integrated Silicon Solution
16Meg x16 256-MBIT SYNCHRONOUS DRAM

• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply IS42S16160 Vdd Vddq 3.3V 3.3V
• LVTTL interface
• Pro
Datasheet
2
IS42S16160G

ISSI
256Mb SYNCHRONOUS DRAM

• Clock frequency: 200,166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2,
Datasheet
3
IS42S16160J

ISSI
256Mb SYNCHRONOUS DRAM

• Clock frequency: 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8,
Datasheet
4
IS42S16160D

Integrated Silicon Solution
256-MBIT SYNCHRONOUS DRAM

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4, 8
Datasheet
5
IS42S16160B

Integrated Silicon Solution
256-MBIT SYNCHRONOUS DRAM

• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge www.DataSheet4U.com
• Internal bank OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs
Datasheet
6
IS42S16160C

ISSI
256Mb Single Data Rate Synchronous DRAM
- Single 3.3V ±0.3V power supply - Max. Clock frequency : - 6:166MHz<3-3-3>/-7:143MHz<3-3-3>/-75:133MHz<3-3-3> - Fully synchronous operation referenced to clock rising edge - 4-bank operation controlled by BA0,BA1(Bank Address) - /CAS latency- 2/3 (p
Datasheet
7
IS42S16160L

ISSI
256Mb SYNCHRONOUS DRAM

• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single Power supply: 3.3V + 0.3V
• LVTTL interface
• Programmable burst length
  – (1, 2, 4
Datasheet



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