IRLZ34N डाटा शीट PDF( Datasheet )

www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche

www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power tr

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ34N， IIRLZ34N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤35mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated Descript

www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Ra

www.DataSheet4U.com PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Powe

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching G l Fully Avalanche Rated Descript