IRLZ34 डाटा शीट PDF( Datasheet )

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Power MOSFET IRLZ34, SiHLZ34 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 5.0 V 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single 0.050 D TO-220AB S D G G S N-Chan

PD - 9.905A IRLZ34S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 5 V 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Single 0.05 I2PAK (TO-26

www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche

www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power tr

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ34N， IIRLZ34N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤35mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested